Reference Only

HN2C01FU-Y(TE85L,F

Bipolar Transistors - BJT .

Manufacturer:

Mfr Part:
HN2C01FU-Y(TE85L,F

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSMT-6
Transistor PolarityNPN
ConfigurationDual
Maximum DC Collector Current150 mA
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO60 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage100 mV
Maximum DC Collector Current150 mA
Pd - Power Dissipation200 mW
Gain Bandwidth Product fT80 MHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 125 C
PackagingReel
Continuous Collector Current150 mA
DC Collector/Base Gain hfe Min120
DC Current Gain hFE Max400
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Reel

(Minimum: 3.000 / Multiples: 1)
Quantity Unit PriceExt. Price
0,073 €219,00 €
0,061 €366,00 €
0,054 €486,00 €
0,041 €984,00 €
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