Reference Only

HN7G01FE-A(TE85L,F

Obsolete
Bipolar Transistors - BJT Vceo=-12V Vds=20V Ic=-400mA Id=50mA

Manufacturer:

Mfr Part:
HN7G01FE-A(TE85L,F

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleThrough Hole
Package / CaseES6-6
Transistor PolarityPNP
ConfigurationDual
Maximum DC Collector Current400 mA
Collector- Emitter Voltage VCEO Max12 V
Collector- Base Voltage VCBO15 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage110 mV
Maximum DC Collector Current400 mA
Pd - Power Dissipation100 mW
SeriesHN7G01
PackagingReel
Continuous Collector Current- 400 mA
DC Collector/Base Gain hfe Min300
DC Current Gain hFE Max1000
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Reel

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