Reference Only

IXBN75N170A

IGBTs 75 Amps 1700V 6.00 Rds

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Mfr Part:
IXBN75N170A

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Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseSOT-227B-4
Mounting StyleScrew Mount
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.7 kV
Collector-Emitter Saturation Voltage4.95 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C75 A
Pd - Power Dissipation625 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesIXBN75N170
PackagingTube
Continuous Collector Current Ic Max350 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameBIMOSFET

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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