Reference Only
IXBN75N170A
IGBTs 75 Amps 1700V 6.00 Rds
Datasheet
IXBN75N170A DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | IGBTs | |
| Technology | Si | |
| Package / Case | SOT-227B-4 | |
| Mounting Style | Screw Mount | |
| Configuration | Single | |
| Collector- Emitter Voltage VCEO Max | 1.7 kV | |
| Collector-Emitter Saturation Voltage | 4.95 V | |
| Maximum Gate Emitter Voltage | - 20 V, 20 V | |
| Continuous Collector Current at 25 C | 75 A | |
| Pd - Power Dissipation | 625 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Series | IXBN75N170 | |
| Packaging | Tube | |
| Continuous Collector Current Ic Max | 350 A | |
| Gate-Emitter Leakage Current | 100 nA | |
| Product Type | IGBT Transistors | |
| Subcategory | IGBTs | |
| Tradename | BIMOSFET |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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