Reference Only

IXFN50N120SIC

Obsolete
SiC MOSFETs 1200V SIC MOSFET SOT227

Manufacturer:

Mfr Part:
IXFN50N120SIC

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategorySiC MOSFETs
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current47 A
Rds On - Drain-Source Resistance50 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 155 C
ConfigurationSingle
Fall Time19 ns
PackagingTube
Product TypeSiC MOSFETS
ProductSiC MOSFET Modules
Rise Time9 ns
SubcategoryTransistors
TechnologySiC
TypeHiperFET
Typical Turn-Off Delay Time75 ns
Typical Turn-On Delay Time23 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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