Reference Only

IXFX26N90

Not Recommended for New Designs
MOSFETs 26 Amps 900V 0.3 Rds

Manufacturer:

Mfr Part:
IXFX26N90

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage900 V
Id - Continuous Drain Current26 A
Rds On - Drain-Source Resistance300 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation560 W
Channel ModeEnhancement
TradenameHyperFET
PackagingTube
ConfigurationSingle
Fall Time24 ns
Product TypeMOSFETs
Rise Time35 ns
SeriesHiPerFET
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time130 ns
Typical Turn-On Delay Time60 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Tube

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