Reference Only

IXGT20N140C3H1

Obsolete
IGBTs 40khz C-IGBT w/Diode Power Device

Manufacturer:

Mfr Part:
IXGT20N140C3H1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseD3PAK-3 (TO-268-3)
Mounting StyleSMD/SMT
Collector- Emitter Voltage VCEO Max1.4 kV
Collector-Emitter Saturation Voltage4 V
Maximum Gate Emitter Voltage20 V
Continuous Collector Current at 25 C42 A
Pd - Power Dissipation250 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesIXGT20N140
PackagingTube
Gate-Emitter Leakage Current100 nA
Product TypeIGBTs
SubcategoryTransistors
TradenameGenX3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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