Reference Only

IXGT24N170

IGBTs 24 Amps 1200 V 3.3 V Rds.

Manufacturer:

Mfr Part:
IXGT24N170

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-268-3
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.7 kV
Collector-Emitter Saturation Voltage2.5 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C50 A
Pd - Power Dissipation250 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesIXGT24N170
PackagingTube
Continuous Collector Current Ic Max150 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead

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EDA / CAD Models

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10,57 €317,10 €
9,13 €1.095,60 €
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