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IXSA65N120L2-7TR

New Product
SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L.

Manufacturer:

Mfr Part:
IXSA65N120L2-7TR

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategorySiC MOSFETs
Mounting StyleSMD/SMT
Package / CaseTO-263-7L
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current65 A
Rds On - Drain-Source Resistance53 mOhms
Vgs - Gate-Source Voltage- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge110 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation417 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time11.6 ns
PackagingReel
Product TypeSiC MOSFETS
ProductMOSFETs
Rise Time19.6 ns
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20.8 ns
Typical Turn-On Delay Time11 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Lead Time: 27 Weeks
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5,18 €4.144,00 €
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