IXSH30N60B2D1 IXYS

IXSH30N60B2D1

End of Life
IGBTs 30 Amps 600V 2.5 Rds

Manufacturer:

Mfr Part:
IXSH30N60B2D1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-247-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max600 V
Collector-Emitter Saturation Voltage2 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Pd - Power Dissipation250 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesIXSH30N60
PackagingTube
Continuous Collector Current Ic Max48 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541590080
TARIC8541590000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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EDA / CAD Models

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