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IXSJ80N120R1K

New Product
SiC MOSFETs 1200V 36mOhm (43A at 25C) SiC MOSFET in isolated TO247-4L.

Manufacturer:

Mfr Part:
IXSJ80N120R1K

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseISO247-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current85 A
Rds On - Drain-Source Resistance23.4 mOhms
Vgs - Gate-Source Voltage21 V
Vgs th - Gate-Source Threshold Voltage4.8 V
Qg - Gate Charge155 nC
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation223.2 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time10 ns
PackagingTube
Product TypeSiC MOSFETS
ProductSiC MOSFETS
Rise Time22 ns
SeriesIXSJxxN120R1K
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
TypePower MOSFET
Typical Turn-Off Delay Time59 ns
Typical Turn-On Delay Time41 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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22,18 €6.654,00 €
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