Reference Only

IXTP05N100P

MOSFETs Polar Pwr MOSFET 1KV w/reduced Rds(on)

Manufacturer:

Mfr Part:
IXTP05N100P

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current500 mA
Rds On - Drain-Source Resistance30 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge8.1 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation50 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time15 ns
Product TypeMOSFETs
Rise Time15 ns
SeriesIXTP05N100
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Typical Turn-On Delay Time6 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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