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IXXH30N65C4D1

IGBTs DISC IGBT 650V TO264-3.

Manufacturer:

Mfr Part:
IXXH30N65C4D1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-247-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage2.5 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C62 A
Pd - Power Dissipation230 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
SeriesTrench - 650V - 1200V GenX11
PackagingTube
Continuous Collector Current Ic Max62 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameXPT

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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(Minimum: 300 / Multiples: 30)
Quantity Unit PriceExt. Price
4,25 €1.275,00 €
3,78 €1.927,80 €
3,35 €3.417,00 €
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