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IXXH80N65B4D1

IGBTs DISC IGBT 650V TO247AD.

Manufacturer:

Mfr Part:
IXXH80N65B4D1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-247-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage2.1 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C180 A
Pd - Power Dissipation625 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
SeriesTrench - 650V - 1200V GenX20
PackagingTube
Continuous Collector Current Ic Max180 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameXPT

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Quantity Unit PriceExt. Price
8,70 €261,00 €
7,52 €902,40 €
7,12 €3.631,20 €
6,65 €6.783,00 €
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