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IXYA20N65C3D1

IGBTs DISC IGBT 650V TO263.

Manufacturer:

Mfr Part:
IXYA20N65C3D1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseD2PAK-3 (TO-263-3)
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage2.27 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C50 A
Pd - Power Dissipation200 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Continuous Collector Current Ic Max105 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

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Tube

(Minimum: 300 / Multiples: 50)
Quantity Unit PriceExt. Price
2,75 €825,00 €
2,45 €1.225,00 €
2,16 €2.160,00 €
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