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IXYH55N120C4

IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247.

Manufacturer:

Mfr Part:
IXYH55N120C4

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-247-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.2 kV
Collector-Emitter Saturation Voltage2.5 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C140 A
Pd - Power Dissipation650 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Series1200V XPTTM Gen 10
PackagingTube
Continuous Collector Current Ic Max290 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameXPT

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 32 Weeks
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(Minimum: 300 / Multiples: 1)
Quantity Unit PriceExt. Price
7,86 €2.358,00 €
6,55 €3.340,50 €
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