Reference Only

IXYK110N120B4

IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264.

Manufacturer:

Mfr Part:
IXYK110N120B4

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-264-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.2 kV
Collector-Emitter Saturation Voltage2.1 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C340 A
Pd - Power Dissipation1.36 kW
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Series1200V XPTTM Gen 5
PackagingTube
Continuous Collector Current Ic Max340 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameXPT

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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EDA / CAD Models

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Lead Time: 32 Weeks
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14,18 €4.254,00 €
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