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IXYP10N65B3D1

IGBTs DISC IGBT 650V TO-220.

Manufacturer:

Mfr Part:
IXYP10N65B3D1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-220-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage1.95 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C32 A
Pd - Power Dissipation160 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameXPT

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

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Tube

(Minimum: 300 / Multiples: 1)
Quantity Unit PriceExt. Price
2,61 €783,00 €
2,32 €1.160,00 €
2,05 €2.050,00 €
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