Reference Only

IXYP10N65C3D1M

IGBTs DISC IGBT 650V TO-220.

Manufacturer:

Mfr Part:
IXYP10N65C3D1M

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-220-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage2.27 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C15 A
Pd - Power Dissipation53 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Continuous Collector Current Ic Max50 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 300 / Multiples: 1)
Quantity Unit PriceExt. Price
1,94 €582,00 €
1,62 €810,00 €
1,50 €1.500,00 €
1,41 €3.525,00 €
Need more?
Contact Us