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IXYP20N65B3D1

IGBTs DISC IGBT 650V TO-220.

Manufacturer:

Mfr Part:
IXYP20N65B3D1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-220-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage1.77 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C58 A
Pd - Power Dissipation230 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Continuous Collector Current Ic Max108 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

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(Minimum: 300 / Multiples: 50)
Quantity Unit PriceExt. Price
2,64 €792,00 €
2,34 €1.170,00 €
2,08 €2.080,00 €
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