Reference Only
IXYQ30N65B3D1
IGBTs DISC IGBT 650V TO-3P.
Datasheet
IXYQ30N65B3D1 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | IGBTs | |
| Technology | Si | |
| Package / Case | TO-3P-3 | |
| Mounting Style | Through Hole | |
| Configuration | Single | |
| Collector- Emitter Voltage VCEO Max | 650 V | |
| Collector-Emitter Saturation Voltage | 1.8 V | |
| Maximum Gate Emitter Voltage | - 20 V, 20 V | |
| Continuous Collector Current at 25 C | 70 A | |
| Pd - Power Dissipation | 270 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Packaging | Tube | |
| Continuous Collector Current Ic Max | 160 A | |
| Gate-Emitter Leakage Current | 100 nA | |
| Product Type | IGBT Transistors | |
| Subcategory | IGBTs |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290095 |
| TARIC | 8541290000 |
| RoHS Compliant | Call to Verify RoHS |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
Available For Backorder
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 300 / Multiples: 30)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5,49 € | 1.647,00 € | |
| 4,90 € | 2.499,00 € | |
| 4,58 € | 4.671,60 € |
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