Reference Only

IXYQ30N65B3D1

IGBTs DISC IGBT 650V TO-3P.

Manufacturer:

Mfr Part:
IXYQ30N65B3D1

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-3P-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage1.8 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C70 A
Pd - Power Dissipation270 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Continuous Collector Current Ic Max160 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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(Minimum: 300 / Multiples: 30)
Quantity Unit PriceExt. Price
5,49 €1.647,00 €
4,90 €2.499,00 €
4,58 €4.671,60 €
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