Reference Only

IXZH16N60

Obsolete
RF MOSFET Transistors 600V 16A RF MOSFET TO-247

Manufacturer:

Mfr Part:
IXZH16N60

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryRF MOSFET Transistors
Transistor PolarityN-Channel
TechnologySi
Id - Continuous Drain Current18 A
Vds - Drain-Source Breakdown Voltage600 V
Rds On - Drain-Source Resistance470 mOhms
Output Power250 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Mounting StyleThrough Hole
Package / CaseTO-247AD-3
PackagingTube
Forward Transconductance - Min4 S
Number of Channels1 Channel
Pd - Power Dissipation3 W
Product TypeRF MOSFET Transistors
Qg - Gate Charge41 nC
SeriesIXZH16N60
SubcategoryMOSFETs
TypeRF Power MOSFET
Vgs - Gate-Source Voltage- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage3.2 V

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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