Reference Only

LSIC1MO120E0080

SiC MOSFETs 1200V 80mOhm SiC MOSFET.

Manufacturer:

Mfr Part:
LSIC1MO120E0080

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current39 A
Rds On - Drain-Source Resistance80 mOhms
Vgs - Gate-Source Voltage- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage2.8 V
Qg - Gate Charge95 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation179 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time6 ns
PackagingTube
Product TypeSiC MOSFETS
Rise Time10 ns
SeriesLSIC1MO
SubcategoryTransistors
TechnologySiC
Typical Turn-Off Delay Time16 ns
Typical Turn-On Delay Time10 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead CAS# 7439-92-1

Documents

EDA / CAD Models

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