Reference Only
MG250V2YMS3(DAE)
New Product
MOSFET Modules .
Datasheet
MG250V2YMS3(DAE) DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | MOSFET Modules | |
| Technology | SiC | |
| Mounting Style | Screw Mount | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 1.7 kV | |
| Id - Continuous Drain Current | 250 A | |
| Vgs - Gate-Source Voltage | - 10 V, 25 V | |
| Vgs th - Gate-Source Threshold Voltage | 5.5 V | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 1.35 kW | |
| Packaging | Tray | |
| Configuration | Dual | |
| Fall Time | 0.07 us | |
| Product Type | MOSFET Modules | |
| Product | SiC MOSFETS | |
| Rise Time | 0.07 us | |
| Subcategory | Discrete and Power Modules | |
| Typical Turn-Off Delay Time | 0.43 us | |
| Typical Turn-On Delay Time | 0.18 us |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | 3A228.c |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
Available For Backorder
Quantity
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Unit Price
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Ext. Price
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Tray
(Minimum: 1 / Multiples: 1)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 2.072,07 € | 2.072,07 € |
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