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MG600Q2YMS3(DAE)

New Product
MOSFET Modules .

Manufacturer:

Mfr Part:
MG600Q2YMS3(DAE)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFET Modules
TechnologySiC
Mounting StyleScrew Mount
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current600 A
Vgs - Gate-Source Voltage- 10 V, 25 V
Vgs th - Gate-Source Threshold Voltage5.6 V
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 kW
PackagingTray
ConfigurationDual
Fall Time0.07 us
Product TypeMOSFET Modules
ProductSiC MOSFETS
Rise Time0.1 us
SubcategoryDiscrete and Power Modules
Typical Turn-Off Delay Time0.48 us
Typical Turn-On Delay Time0.23 us

Export and Environmental Classification

AttributeDescription
ECCN3A228.c
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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(Minimum: 1 / Multiples: 1)
Quantity Unit PriceExt. Price
2.473,45 €2.473,45 €
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