Reference Only

MT3S113(TE85L,F)

End of Life
RF Bipolar Transistors RF Bipolar Transistor .1A 800mW

Manufacturer:

Mfr Part:
MT3S113(TE85L,F)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryRF Bipolar Transistors
SeriesMT3S113
Transistor TypeBipolar
TechnologySiGe
Transistor PolarityNPN
Operating Frequency12.5 GHz
DC Collector/Base Gain hfe Min200
Collector- Emitter Voltage VCEO Max5.3 V
Emitter- Base Voltage VEBO600 mV
Continuous Collector Current100 mA
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Mounting StyleSMD/SMT
Package / CaseTO-236-3
PackagingReel
Maximum DC Collector Current100 mA
Pd - Power Dissipation800 mW
Product TypeRF Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210075
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Reel

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