Reference Only
MT3S113(TE85L,F)
End of Life
RF Bipolar Transistors RF Bipolar Transistor .1A 800mW
Datasheet
MT3S113(TE85L,F) DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | RF Bipolar Transistors | |
| Series | MT3S113 | |
| Transistor Type | Bipolar | |
| Technology | SiGe | |
| Transistor Polarity | NPN | |
| Operating Frequency | 12.5 GHz | |
| DC Collector/Base Gain hfe Min | 200 | |
| Collector- Emitter Voltage VCEO Max | 5.3 V | |
| Emitter- Base Voltage VEBO | 600 mV | |
| Continuous Collector Current | 100 mA | |
| Maximum Operating Temperature | + 150 C | |
| Configuration | Single | |
| Mounting Style | SMD/SMT | |
| Package / Case | TO-236-3 | |
| Packaging | Reel | |
| Maximum DC Collector Current | 100 mA | |
| Pd - Power Dissipation | 800 mW | |
| Product Type | RF Bipolar Transistors | |
| Subcategory | Transistors |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541210075 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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