Reference Only

MT3S113TU,LF

RF Bipolar Transistors RF Bipolar Transistor .1A 900mW.

Manufacturer:

Mfr Part:
MT3S113TU,LF

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryRF Bipolar Transistors
SeriesMT3S113TU
Transistor TypeBipolar
TechnologySiGe
Transistor PolarityNPN
Operating Frequency11.2 GHz
DC Collector/Base Gain hfe Min200
Collector- Emitter Voltage VCEO Max5.3 V
Emitter- Base Voltage VEBO600 mV
Continuous Collector Current100 mA
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Mounting StyleSMD/SMT
Package / CaseUFM-3
PackagingReel
Maximum DC Collector Current100 mA
Pd - Power Dissipation900 mW
Product TypeRF Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210075
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

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Reel

(Minimum: 3.000 / Multiples: 1)
Quantity Unit PriceExt. Price
0,274 €822,00 €
0,262 €1.572,00 €
0,246 €2.214,00 €
0,241 €5.784,00 €
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