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MXP120A250SE-T1GE3

New Product
SiC MOSFETs .

Manufacturer:

Mfr Part:
MXP120A250SE-T1GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategorySiC MOSFETs
Mounting StyleSMD/SMT
Package / CaseTO-263-7L
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1200 V
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance313 mOhms
Vgs - Gate-Source Voltage- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge15 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation85 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time18 ns
PackagingReel
Product TypeSiC MOSFETS
ProductMOSFETs
Rise Time7 ns
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
TypeMaxSiC N-Channel MOSFET
Typical Turn-Off Delay Time10 ns
Typical Turn-On Delay Time9 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 18 Weeks
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(Minimum: 800 / Multiples: 1)
Quantity Unit PriceExt. Price
3,11 €2.488,00 €
3,03 €7.272,00 €
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