Reference Only

MXP120C040W-GE3

New Product
SiC MOSFETs .

Manufacturer:

Mfr Part:
MXP120C040W-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247AD-3L
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1200 V
Id - Continuous Drain Current53 A
Rds On - Drain-Source Resistance54 mOhms
Vgs - Gate-Source Voltage- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage2.9 V
Qg - Gate Charge69 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation288 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time18 ns
PackagingTray
Product TypeSiC MOSFETS
ProductMOSFETs
Rise Time23 ns
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
TypeMaxSiC N-Channel MOSFET
Typical Turn-Off Delay Time24 ns
Typical Turn-On Delay Time24 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 15 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tray

(Minimum: 600 / Multiples: 1)
Quantity Unit PriceExt. Price
8,14 €4.884,00 €
6,90 €8.280,00 €
Need more?