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MXPQ120A063SE-1GE3

New Product
SiC MOSFETs .

Manufacturer:

Mfr Part:
MXPQ120A063SE-1GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
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ManufacturerVishay
Product CategorySiC MOSFETs
Mounting StyleSMD/SMT
Package / CaseTO-263-7L
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1200 V
Id - Continuous Drain Current41 A
Rds On - Drain-Source Resistance79 mOhms
Vgs - Gate-Source Voltage- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage2.9 V
Qg - Gate Charge58 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation221 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time10 ns
PackagingReel
Product TypeSiC MOSFETS
ProductMOSFETs
Rise Time9 ns
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
TypeMaxSiC N-Channel MOSFET
Typical Turn-Off Delay Time19 ns
Typical Turn-On Delay Time18 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 18 Weeks
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4,52 €3.616,00 €
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