Reference Only
MXPQ120A080SE-1GE3
New Product
SiC MOSFETs .
Datasheet
MXPQ120A080SE-1GE3 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Vishay | |
| Product Category | SiC MOSFETs | |
| Mounting Style | SMD/SMT | |
| Package / Case | TO-263-7L | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 1200 V | |
| Id - Continuous Drain Current | 32 A | |
| Rds On - Drain-Source Resistance | 100 mOhms | |
| Vgs - Gate-Source Voltage | - 10 V, + 22 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.9 V | |
| Qg - Gate Charge | 47 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 185 W | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Fall Time | 10 ns | |
| Packaging | Reel | |
| Product Type | SiC MOSFETS | |
| Product | MOSFETs | |
| Rise Time | 9 ns | |
| Subcategory | Transistors | |
| Technology | SiC | |
| Transistor Type | 1 N-Channel | |
| Type | MaxSiC N-Channel MOSFET | |
| Typical Turn-Off Delay Time | 18 ns | |
| Typical Turn-On Delay Time | 16 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
Available For Backorder
Lead Time: 18 Weeks
Quantity
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Unit Price
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Ext. Price
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Reel
(Minimum: 800 / Multiples: 1)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 4,15 € | 3.320,00 € | |
| 4,04 € | 9.696,00 € |
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