
NE68033-T1B-A
RF Bipolar Transistors
Specifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | RF Bipolar Transistors | |
| Series | NE68033 | |
| Technology | Si | |
| Transistor Polarity | NPN | |
| DC Collector/Base Gain hfe Min | 50 at 10 mA at 6 V | |
| Collector- Emitter Voltage VCEO Max | 10 V | |
| Emitter- Base Voltage VEBO | 1.5 V | |
| Minimum Operating Temperature | - 65 C | |
| Maximum Operating Temperature | + 150 C | |
| Configuration | Single | |
| Maximum DC Collector Current | 35 mA | |
| Pd - Power Dissipation | 200 mW | |
| Product Type | RF Bipolar Transistors | |
| Subcategory | Transistors |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| RoHS Compliant | Call to Verify RoHS |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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