NE85630-R25-A Toshiba

NE85630-R25-A

RF Bipolar Transistors

Manufacturer:

Mfr Part:
NE85630-R25-A

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryRF Bipolar Transistors
SeriesNE85630
TechnologySi
Transistor PolarityNPN
DC Collector/Base Gain hfe Min40 at 7 mA at 3 V
Collector- Emitter Voltage VCEO Max12 V
Emitter- Base Voltage VEBO3 V
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Maximum DC Collector Current100 mA
Pd - Power Dissipation150 mW
Product TypeRF Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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