Reference Only

NGD8201BNT4G

Obsolete
IGBTs

Manufacturer:

Mfr Part:
NGD8201BNT4G

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-252-3
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max430 V
Maximum Gate Emitter Voltage- 18 V, 18 V
Continuous Collector Current at 25 C50 A
Pd - Power Dissipation115 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Continuous Collector Current Ic Max50 A
Gate-Emitter Leakage Current640 uA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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EDA / CAD Models

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