Reference Only
NGD8201BNT4G
Obsolete
IGBTs
Datasheet
NGD8201BNT4G DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | IGBTs | |
| Technology | Si | |
| Package / Case | TO-252-3 | |
| Mounting Style | SMD/SMT | |
| Configuration | Single | |
| Collector- Emitter Voltage VCEO Max | 430 V | |
| Maximum Gate Emitter Voltage | - 18 V, 18 V | |
| Continuous Collector Current at 25 C | 50 A | |
| Pd - Power Dissipation | 115 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Continuous Collector Current Ic Max | 50 A | |
| Gate-Emitter Leakage Current | 640 uA | |
| Product Type | IGBT Transistors | |
| Subcategory | IGBTs |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290095 |
| TARIC | 8541290000 |
| RoHS Compliant | Call to Verify RoHS |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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