Reference Only

PGA26E19BA

Obsolete
GaN FETs MOSFET 600VDC 190mohm X-GaN

Manufacturer:

Mfr Part:
PGA26E19BA

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerPanasonic
Product CategoryGaN FETs
Mounting StyleSMD/SMT
Package / CaseDFN-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current19 A
Rds On - Drain-Source Resistance140 mOhms
Vgs th - Gate-Source Threshold Voltage1.2 V
Qg - Gate Charge2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation83 W
Channel ModeEnhancement
TradenameX-GaN
ConfigurationSingle
Fall Time2.4 ns
Moisture SensitiveYes
Product TypeGaN FETs
Rise Time5.2 ns
SeriesPGA26E19BA
SubcategoryTransistors
TechnologyGaN
Typical Turn-Off Delay Time3.4 ns
Typical Turn-On Delay Time3.4 ns
Part # AliasesPGA26E19BA2

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead

Documents

Application Notes

Specification Sheets

EDA / CAD Models

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