Reference Only
PGA26E19BA
Obsolete
GaN FETs MOSFET 600VDC 190mohm X-GaN
Datasheet
PGA26E19BA DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Panasonic | |
| Product Category | GaN FETs | |
| Mounting Style | SMD/SMT | |
| Package / Case | DFN-8 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 600 V | |
| Id - Continuous Drain Current | 19 A | |
| Rds On - Drain-Source Resistance | 140 mOhms | |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V | |
| Qg - Gate Charge | 2 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 83 W | |
| Channel Mode | Enhancement | |
| Tradename | X-GaN | |
| Configuration | Single | |
| Fall Time | 2.4 ns | |
| Moisture Sensitive | Yes | |
| Product Type | GaN FETs | |
| Rise Time | 5.2 ns | |
| Series | PGA26E19BA | |
| Subcategory | Transistors | |
| Technology | GaN | |
| Typical Turn-Off Delay Time | 3.4 ns | |
| Typical Turn-On Delay Time | 3.4 ns | |
| Part # Aliases | PGA26E19BA2 |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| RoHS Compliant | RoHS Per Exemption RoHS Per Exemption |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | Yes |
| REACH Substance Name | Lead |
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