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SI3552BDV-T1-GE3

New Product
MOSFETs .

Manufacturer:

Mfr Part:
SI3552BDV-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSOP-6
Transistor PolarityN-Channel, P-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current1.9 A, 3.4 A
Rds On - Drain-Source Resistance0.058 Ohms, 0.165 Ohms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge1.8 nC, 2.4 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.1 W
Channel ModeEnhancement
PackagingReel
ConfigurationDual
Fall Time7 ns, 10 ns
Forward Transconductance - Min3 S, 10 S
Product TypeMOSFETs
Rise Time9 ns, 15 ns
SubcategoryTransistors
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time10 ns, 11 ns
Typical Turn-On Delay Time4 ns, 5 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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