Reference Only

SI4842BDY-T1-GE3

MOSFETs 30V 28A 6.25W 4.2mohm @ 10V.

Manufacturer:

Mfr Part:
SI4842BDY-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOIC-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current28 A
Rds On - Drain-Source Resistance4.2 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1.4 V
Qg - Gate Charge100 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation6.25 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Product TypeMOSFETs
SeriesSI4
SubcategoryTransistors
Part # AliasesSI4842BDY-GE3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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(Minimum: 2.500 / Multiples: 1)
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