Reference Only

SI7110DN-T1-GE3

MOSFETs 20V 21.1A 3.8W 5.3mohm @ 10V.

Manufacturer:

Mfr Part:
SI7110DN-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current21.1 A
Rds On - Drain-Source Resistance5.3 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge14 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation3.8 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time10 ns
Forward Transconductance - Min71 S
Product TypeMOSFETs
Rise Time10 ns
SeriesSI7
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time36 ns
Typical Turn-On Delay Time12 ns
Part # AliasesSI7110DN-GE3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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