Reference Only

SI7652DP-T1-GE3

MOSFETs 30V 15A 3.9W 15.8mohm @ 10V.

Manufacturer:

Mfr Part:
SI7652DP-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current15 A
Rds On - Drain-Source Resistance15.8 mOhms
Vgs - Gate-Source Voltage- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage1.8 V
Qg - Gate Charge8.7 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation3.9 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time14 ns
Forward Transconductance - Min16 S
Product TypeMOSFETs
Rise Time12 ns
SeriesSI7
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
Typical Turn-On Delay Time7 ns
Part # AliasesSI7652DP-GE3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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