Reference Only

SI7742DP-T1-GE3

End of Life
MOSFETs 30V 60A 83W 3.5mohm @ 10V

Manufacturer:

Mfr Part:
SI7742DP-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current60 A
Rds On - Drain-Source Resistance3.5 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.7 V
Qg - Gate Charge75 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation83 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time23 ns
Forward Transconductance - Min105 S
Product TypeMOSFETs
Rise Time18 mOhms
SeriesSI7
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
Typical Turn-On Delay Time43 ns
Part # AliasesSI7742DP-GE3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Reel

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