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SI7804BDN-T1-GE3

New Product
MOSFETs .

Manufacturer:

Mfr Part:
SI7804BDN-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current6 A
Rds On - Drain-Source Resistance0.0192 Ohms
Vgs - Gate-Source Voltage- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.2 V
Qg - Gate Charge10 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation19.9 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time27 ns
Forward Transconductance - Min22 S
Product TypeMOSFETs
Rise Time45 ns
Seriessi7804bdn
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time16 ns
Typical Turn-On Delay Time17 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 53 Weeks
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