Reference Only

SI7840BDP-T1-GE3

MOSFETs 30V 16.5A 4.1W 8.5mohm @ 10V.

Manufacturer:

Mfr Part:
SI7840BDP-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current11 A
Rds On - Drain-Source Resistance8.5 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge14 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.8 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time14 ns
Forward Transconductance - Min60 S
Product TypeMOSFETs
Rise Time14 ns
SeriesSI7
SubcategoryTransistors
Transistor Type1 N Channel
Typical Turn-Off Delay Time39 ns
Typical Turn-On Delay Time17 ns
Part # AliasesSI7840BDP-GE3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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0,84 €2.520,00 €
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