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SIA477EDJ-T1-GE3

MOSFETs 12V 14mOhm@4.5V 12A P-Ch.

Manufacturer:

Mfr Part:
SIA477EDJ-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSC-70-6
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage12 V
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance11.6 mOhms
Vgs - Gate-Source Voltage- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge87 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation19 W
Channel ModeEnhancement
TradenameTrenchFET, PowerPAK
PackagingReel
ConfigurationSingle
Fall Time45 ns
Forward Transconductance - Min31 S
Product TypeMOSFETs
Rise Time28 ns
SeriesSIA
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time74 ns
Typical Turn-On Delay Time30 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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