Reference Only

SIHG30N60E-E3

MOSFETs 600V Vds 30V Vgs TO-247AC.

Manufacturer:

Mfr Part:
SIHG30N60E-E3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current29 A
Rds On - Drain-Source Resistance125 mOhms
Vgs - Gate-Source Voltage30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge85 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation250 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time36 ns
Product TypeMOSFETs
Rise Time32 ns
SeriesSIHG E
SubcategoryTransistors
Typical Turn-Off Delay Time63 ns
Typical Turn-On Delay Time19 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

Available For Backorder
Lead Time: 28 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 500 / Multiples: 500)
Quantity Unit PriceExt. Price
2,87 €1.435,00 €
Need more?