SIHK039N60AEFT1GE3 Vishay / Siliconix

SIHK039N60AEFT1GE3

New Product
MOSFETs .

Manufacturer:

Mfr Part:
SIHK039N60AEFT1GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
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ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current58 A
Rds On - Drain-Source Resistance44.8 mOhms
Vgs - Gate-Source Voltage30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge102 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+150 C
Pd - Power Dissipation368 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time46 ns
Forward Transconductance - Min18 S
Pin Count8
Product TypeMOSFETs
Rise Time65 ns
SeriesSIHK039N60AEFT1
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time150 ns
Typical Turn-On Delay Time42 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 14 Weeks
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Reel

(Minimum: 2.000 / Multiples: 1)
Quantity Unit PriceExt. Price
2,41 €4.820,00 €
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