Reference Only

SIHP18N60E-GE3

MOSFETs 600V Vds 30V Vgs TO-220AB.

Manufacturer:

Mfr Part:
SIHP18N60E-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current18 A
Rds On - Drain-Source Resistance176 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge46 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation179 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time24 ns
Product TypeMOSFETs
Rise Time24 ns
SeriesSIHP E
SubcategoryTransistors
Typical Turn-Off Delay Time51 ns
Typical Turn-On Delay Time17 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Reel

(Minimum: 1.000 / Multiples: 1.000)
Quantity Unit PriceExt. Price
1,46 €1.460,00 €
1,43 €2.860,00 €
1,41 €7.050,00 €
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