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SIJK5716E-T1-GE3

New Product
MOSFETs .

Manufacturer:

Mfr Part:
SIJK5716E-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPack-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage150 V
Id - Continuous Drain Current294 A
Rds On - Drain-Source Resistance2.8 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge130 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 155 C
Pd - Power Dissipation536 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time20 ns
Forward Transconductance - Min88 S
Product TypeMOSFETs
Rise Time22 ns
SeriesSiJK5716E
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time52 ns
Typical Turn-On Delay Time30 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290055
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 38 Weeks
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2,57 €15.420,00 €
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