Reference Only

SISA14DN-T1-GE3

MOSFETs For New Design See: 78-SISHA14DN-T1-GE3.

Manufacturer:

Mfr Part:
SISA14DN-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current20 A
Rds On - Drain-Source Resistance4.25 mOhms
Vgs - Gate-Source Voltage- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage1.1 V
Qg - Gate Charge29 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation26.5 W
Channel ModeEnhancement
TradenameTrenchFET, PowerPAK
PackagingReel
ConfigurationSingle
Fall Time8 ns
Forward Transconductance - Min65 S
Product TypeMOSFETs
Rise Time8 ns
SeriesSISA
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time18 ns
Typical Turn-On Delay Time9 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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