Reference Only

SISA66DN-T1-GE3

MOSFETs 30V Vds TrenchFET PowerPAK 1212-8.

Manufacturer:

Mfr Part:
SISA66DN-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current40 A
Rds On - Drain-Source Resistance1.9 mOhms
Vgs - Gate-Source Voltage- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge66 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation52 W
Channel ModeEnhancement
TradenameTrenchFET, PowerPAK
PackagingReel
ConfigurationSingle
Fall Time10 ns
Forward Transconductance - Min120 S
Product TypeMOSFETs
Rise Time51 ns
SeriesSISA
SubcategoryTransistors
Typical Turn-Off Delay Time28 ns
Typical Turn-On Delay Time30 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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(Minimum: 6.000 / Multiples: 1)
Quantity Unit PriceExt. Price
0,375 €2.250,00 €
0,369 €3.321,00 €
0,35 €8.400,00 €
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