Reference Only

SIZF920DT-T1-GE3

End of Life
MOSFETs Dual 30V Vds PowerPAIR 6x5F

Manufacturer:

Mfr Part:
SIZF920DT-T1-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAIR-6x5-8
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current76 A, 197 A
Rds On - Drain-Source Resistance3.07 mOhms, 1.05 mOhms
Vgs - Gate-Source Voltage- 16 V, - 12 V, 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage1.1 V
Qg - Gate Charge29 nC, 125 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation28 W, 74 W
Channel ModeEnhancement
TradenameTrenchFET; PowerPAK
PackagingReel
ConfigurationDual
Fall Time5 ns, 10 ns
Forward Transconductance - Min65 S, 135 S
Product TypeMOSFETs
Rise Time5 ns, 70 ns
SubcategoryTransistors
Transistor Type2 N-Channel
Typical Turn-Off Delay Time20 ns, 43 ns
Typical Turn-On Delay Time11 ns, 17 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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