Reference Only

SQ1539EH-T1_GE3

MOSFETs N Ch 30Vds 20Vgs AEC-Q101 Qualified.

Manufacturer:

Mfr Part:
SQ1539EH-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Transistor PolarityN-Channel, P-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current850 mA
Rds On - Drain-Source Resistance210 mOhms, 788 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1 V, 2.6 V
Qg - Gate Charge1.4 nC, 1.6 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.5 W
Channel ModeEnhancement
QualificationAEC-Q101
TradenameTrenchFET
PackagingReel
ConfigurationDual
Fall Time32 ns, 17 ns
Forward Transconductance - Min1.2 S, 0.6 S
Product TypeMOSFETs
Rise Time18 ns, 39 ns
SeriesSQ
SubcategoryTransistors
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time8 ns, 10 ns
Typical Turn-On Delay Time3 ns, 4 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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0,151 €906,00 €
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